양자대학원양자대학원

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구성원

교수진
구성원

교수진

Yoon Seok Oh오윤석

  • 물리학
  • 강상관 양자물질
  • 고체 점결함

연구주제

차세대 큐빗 소재, 양자단결정, 신 교자성 단결정, 전력반도체, 다강체&양자자성체, 단결정 성장, 강유전체

  • 연구분야위상초전체, 전력반도체, 단결정 성장, 차세대 웨이퍼, 다강체, 양자자성체
  • 연구실차세대 큐빗·반도체 소재 연구실

학력

  • 2010 Ph.D. in Physics, Seoul National University
  • 2006 M.S. in Physics, Seoul National University
  • 2004 B.S. in Physics, Seoul National University

주요 경력

  • 2021-present Associate Professor, Department of Physics, UNIST
  • 2014-2021 Assistant Professor, Department of Physics, UNIST
  • 2011-2014 Postdoctoral Research Associates, Department of Physics & Astronomy, Rutgers University, USA
  • 2010-2011 Postdoctoral Researcher, Department of Physics & Astronomy, Rutgers University, USA
  • 2010 Postdoctoral Researcher, Department of Physics & Astronomy, Seoul National University, USA

논문

  • · Advanced Functional Materials "Polar Perturbations in Functional Oxide Heterostructures" (2023).
  • · Advanced Materials "Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square‐tensile‐strain" (2022).
  • · Physical Review B "Unconventional critical behavior in the quasi-one-dimensional S = 1 chain NiTe2O5" (2019).
  • · Nature Materials "Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals" (2015)
  • · Nature Communications "Non-hysteretic colossal magnetoelectricity in a collinear antiferromagnet" (2014).

특허

  • · 국내특허: “바륨지르코늄 산화물을 이용한 단결정 잉곳 및 그 제조 방법”, 등록번호: 10-2092358
  • · PCT: “Single Crystal Ingot Using Barium Zirconium Oxide and Preparation Method Therefor”, 출원번호: PCT/KR2019/006502
  • · US Patent: “Single Crystal Ingot Using Barium Zirconium Oxide and Preparation Method Therefor”, 출원번호: 16/979369

목록